Elektronische bauelemente npn plastic encapsulated transistor. Toshiba transistor silicon pnp epitaxial type pct process. Bd140 is a famous pnp type transistor, it is used in many electronics circuits, this transistor can handle current upto 1. The 2sc5198 transistor might have a current gain anywhere between 55 and 160.
Basic semiconductor physics, diodes, the nonlinear diode model, load line analysis, large signal diode models, offset diode model, transistors, large signal bjt model, load line analysis, small signal model and transistor amplification. The gain of the 2sc5198r will be in the range from 55 to 100, 2sc5198o ranges from 80 to 160. Your personal data will be used to support your experience throughout this website, to manage access to your account, and for other purposes described in our privacy policy. A diodes iv characteristic is shown in figure 6 below. Junction, storage temperature tj, tstg 150, 55150 c electrical characteristics ta 25c unless otherwise specified parameter symbol min typ max unit test condition collector to base breakdown voltage vbrcbo 80 v ic0. Pnp switching transistor in a sot23 to236ab small surfacemounted device smd plastic package. Confirm that you have received the latest product standards or specifications before final design, purchase or use. D669a transistors datasheet pdf encapsulate transistors. D669 datasheet npn transistor 2sd669, hitachi, d669 pdf, d669 pinout, d669 manual, d669 schematic, d669 equivalent, d669 data, circuit.
Mcc tm micro commercial components 20736 marilla street chatsworth 2sd667l micro commercial components ca 911 phone. D669 npn type plastic encapsulate transistors, secos. Texas instruments transistor and diode databook 1st ed 1973 datasheets for diodes from 1n251 on and transistors from 2n117 on acrobat 7 pdf 34. Collector current collector current ic ma base to emitter saturation voltage v. B page 3 of 2sd6692sd669a npn type plastic encapsulate transistors 1. Rohs rohs 2sd669am series semiconductor nell high power products bipolar general purpose npn power transistor 1. Bd140 transistor pinout, equivalent, uses, features.
May 04, 2016 h669a datasheet npn silicon transistor, h669a pdf, h669a pinout, h669a equivalent, data, h669a circuit, h669a output, ic, h669a schematic, h669a manual. The datasheet is printed for reference information only. If the checkbox is invisible, the corresponding document cannot be downloaded in batch. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. Units vceosus collectoremitter sustaining voltage bd5 ic 30 ma, ib 0 45 bd7 60 v bd9 80 icbo collector cutoff current vcb 30 v, ie 0 0. D669 datasheet, d669 pdf, replacement, equivalent, data sheets, d669 pinout, schematic, circuit. Storage temperature vcbo vceo vebo ic pc tj tstg 1500 1500 6 5 50 15050150 v v v a w oc oc electrical characteristics ta25oc characterristic symbol test condition min typ max unit collector emitter cutoff currentvbe0 collector cutoff current emitter cutoff current dc current gain collector emitter saturation voltage ices icbo iebo hfe.
The gain of the 2sb649b will be in the range from 60. D669 datasheet pdf pinout silicon npn power transistors. Piv is the peakinversevoltage of the diode forward bias occurs when the ptype block is connected to the positive terminal of the battery and the ntype is connected to the negative terminal of. Savantic semiconductor product specification 2 silicon npn power transistors 2sd1577 characteristics tj25 unless otherwise specified symbol parameter conditions min typ. Elektronische bauelemente npn plastic encapsulated transistor 14feb2011 rev. This data sheet and its contents the information belong to the members of the premier farnell group of companies the group or are licensed to it. Any and all information described or contained herein are subject to change without notice due to producttechnology improvement, etc. Piv is the peakinversevoltage of the diode forward bias occurs when the ptype block is connected to the positive terminal of the battery and the ntype is connected to the negative terminal of the battery, as shown below. D669a datasheet pdf pinout silicon npn power transistors. Datasheet archive here youll find detailed product descriptions and quickclick access to product datasheets. These were made by etching depressions into an ntype germanium base from both sides with jets of indiumiii sulfate until it was a few tenthousandths of an inch thick. Darlington power transistors npn silicon page 110612 v1. A143 datasheet, a143 pdf, a143 data sheet, datasheet, data sheet, pdf. B 33 zelectrical characteristic curves input voltage.
In certain cases, the quoted collector current may be exceeded. D669 datasheet 2sd669 transistor, pdf, pinout, equivalent. B 23 zpackaging specifications zequivalent circuit tl emt3 smt3 sptumt3 dtc114ee dtc114em part no. D669a datasheet vcbo180v, npn transistor hitachi, 2sd669a datasheet, d669a pdf, d669a pinout, d669a manual, d669a schematic, d669a equivalent. Transistors npn plastic power transistors low frequency power amplifier pin configuration 1. A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. A voltage or current applied to one pair of the transistors terminals controls the current through another pair of terminals. Collector power dissipation junction temperature storage temperature note. Max unit vcesat collectoremitter saturation voltage ic4.
D669ac datasheet, d669ac pdf, d669ac data sheet, d669ac manual, d669ac pdf, d669ac, datenblatt, electronics d669ac, alldatasheet, free, datasheet, datasheets, data sheet, datas sheets, databook, free datasheet. Dtc114em dtc114ee dtc114eua dtc114eka dtc114esa 100ma. Select the part name and then you can download the datasheet in pdf format. The first highfrequency transistor was the surfacebarrier germanium transistor developed by philco in 1953, capable of operating up to 60 mhz. Operating and storage junction temperature range t j,t stg. Power transistor specification list 2n3055 npn 60v 14a 20 to 70 155w 2n6036 pnp, darlington 80v 4a 750 to 15000 40w 2n6039 npn, darlington 80v 4a 750 to 15000 40w 2n6109 pnp 50v 7a 30 to 150 40w bd9 npn 80v 1. Dtc114em dtc114ee dtc114eua transistors dtc114eka dtc114esa rev. The gain of the 2sc5198r will be in the range from 55. The gain of the 2sb649b will be in the range from 60 to 120, 2sb649c ranges from 100 to 200, 2sb649d ranges from 160 to 320. V ce 5 v vcbo vceo ic pc tj 649 649a 669 669a max, temperature storage.
Aug 05, 2016 d669a datasheet vcbo180v, npn transistor hitachi, 2sd669a datasheet, d669a pdf, d669a pinout, d669a manual, d669a schematic, d669a equivalent. Pnp resistorequipped transistor see simplified outline, symbol and pinning for package details. The 2sb649 transistor might have a current gain anywhere between 60 and 320. Datasheet search engine for electronic components and semiconductors.
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